tm june 2009 p-channel 1.7v powertrench ? wl-csp mosfet ?2009 fairchild semiconductor corporation FDZ193P rev.c2 (w) www.fairchildsemi.com 1 FDZ193P p-channel 1.7v powertrench ? wl-csp mosfet -20v, -1a, 90m : features ? max r ds(on) = 90m : at v gs = -4.5v, i d = -1a ? max r ds(on) = 130m : at v gs = -2.5v, i d = -1a ? max r ds(on) = 300m : at v gs = -1.7v, i d = -1a ? occupies only 1.5 mm 2 of pcb area less than 50% of the area of 2 x 2 bga ? ultra-thin package: less than 0.65 mm height when mounted to pcb ? rohs compliant general description designed on fairchild's advanced 1.7v powertrench ? process with state of the art "low pitch" wlcsp packaging process, the FDZ193P minimizes both pcb space and r ds(on) . this advanced wlcsp mosfet embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r ds(on) . application ? battery management ? load switch ? battery protection mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage -20 v v gs gate to source voltage 12 v i d drain current -continuous (note 1a) -3 a -pulsed -15 p d power dissipation (note 1a) 1.9 w power dissipation (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r t ja thermal resistance, junction to ambient (note 1a) 65 c/w r t ja thermal resistance, junction to ambient (note 1b) 133 device marking device package reel size tape width quantity 2 FDZ193P wl-csp 7?? 8mm 5000 units pin 1 d s s d s g bottom top pin 1 s d g
p-channel 1.7v powertrench ? wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 p a, v gs = 0v -20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = -250 p a, referenced to 25c -11 mv/ c i dss zero gate voltage drain current v ds = -16v, v gs = 0v -1 p a i gss gate to source leakage current v gs = 12v, v gs = 0v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 p a -0.6 -0.9 -1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = -250 p a, referenced to 25c 3 mv/c r ds(on) drain to source on resistance v gs = -4.5v, i d = -1a 66 90 m : v gs = -2.5v, i d = -1a 92 130 v gs = -1.7v, i d = -1a 195 300 v gs = -4.5v, i d = -1a t j = 125c 84 123 i d(on) on to state drain current v gs = -4.5v, v ds = -5v -10 a g fs forward transconductance v ds = -5v, i d = -1a 5.6 s c iss input capacitance v ds = -10v, v gs = 0v, f = 1mhz 660 pf c oss output capacitance 150 pf c rss reverse transfer capacitance 90 pf r g gate resistance f = 1mhz 9.5 : t d(on) turn-on delay time v dd = -10v, i d = -1a v gs = -4.5v, r gen = 6 : 13 23 ns t r rise time 10 20 ns t d(off) turn-off delay time 28 45 ns t f fall time 21 34 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = -10v i d = -1a 710nc q gs gate to source gate charge 1 nc q gd gate to drain ?miller? charge 2 nc i s maximum continuous drain-source diode forward current -1.1 a v sd source to drain diode forward voltage v gs = 0v, i s = -1.1a (note 2) -0.7 -1.2 v t rr reverse recovery time i f = -1a, di/dt = 100a/ p s 19 ns q rr reverse recovery charge 6 nc notes: 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 materi al. the thermal resistance from the junction to the circuit board side of the solder ball, r t jb is defined for reference. for r t jc the thermal reference point for the case is defined as the top surface of the copper chip carrier. r t jc and r t jb are guaranteed by design while r t ja is determined by the user's board design. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 65c/w when mounted on a 1 in 2 pad of 2 oz copper,1.5? x 1.5? x 0.062? thick pcb b. 133c/w when mounted on a minimum pad of 2 oz copper
p-channel 1.7v powertrench ? wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics figure 2. normalized on-res istance vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e vs junction temperature f i g u r e 4 . o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics figure 6. source to drain diode forward voltage vs source current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 v gs = -1.7v v gs = -3.5v v gs = -3v pulse duration = 300 p s duty cycle = 2.0%max v gs = -2.5v v gs = -2v v gs = -4.5v -i d , drain current (a) -v ds , drain to source voltage (v) 0246810121416 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs =-4.5v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance -i d , drain current(a) v gs =-3v v gs = -2.5v v gs = -2v v gs =-3.5v -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i d = -1a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 80 120 160 200 240 pulse duration = 300 p s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = -1a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 v dd = -5v pulse duration = 300 p s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c -i d , drain current (a) -v gs , gate to source voltage (v) 0.2 0.4 0.6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v)
p-channel 1.7v powertrench ? wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 4 figure 7. gate charge characteristics fig ure 8. capacitance vs drain to source voltage f i g u r e 9 . m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 0 . f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation typical characteristics t j = 25c unless otherwise noted 0246810 0 1 2 3 4 5 i d = -1a v dd = -15v v dd = -10v v dd = -5v q g , gate charge(nc) -v gs , gate to source voltage(v) 0.1 1 10 100 1000 20 50 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 2000 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a , case temperature ( o c ) v gs = -2.5v v gs = -4.5v r t ja =65 o c/w -i d , drain current (a) 0.1 1 10 0.01 0.1 1 10 10s 80 dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated r t ja = 133 o c/w t a = 25 o c operation in this area may be limited by r ds(on) -v ds , drain to source voltage (v) -i d , drain current (a) 30 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 0.5 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 50 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a C 125 ----------------------- -
p-channel 1.7v powertrench ? wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 5 figure 12. transient thermal response curve typical characteristics t j = 25c unless otherwise noted 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a
p-channel 1.7v powertrench ? wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 6
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wl-csp mosfet FDZ193P rev.c2 (w) www.fairchildsemi.com 7
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